1.光谱响应曲线                                                      
 

          The photovoltaic effect is the generation of a potential across the p-n junction when radiation of the proper wavelength is incident upon it. When the photon flux irradiates the junction, electron-hole pairs are formed if the photon energy exceeds the forbidden gap energy. 
      The field sweeps the electrons from the p region to the n region, and holes from the n region to the p region. This process makes the p region positive and the n region negative, and will produce current flow in an external circuit. An equivalent circuit of the InSb detector is represented below. This consists of both a signal and noise current generator in parallel with a resistive and capacitive term.



     When background radiation shifts the operation curve by generating a constant output in the active element, the detector should be reversed-biased to bring it back to the optimum operating point: zero voltage.
     This can be achieved by utilizing a matched preamplifier such as our IAP-1000IS. The detector preamplifier system operates in the detector noise limited mode.  A dual output supply is required.
2.选型表格                

Model Number	FOV=60O,  (lpk,1000,1)								Std. Pkg.	Std. Window
	Active Area Element  (mm)	D* (cmHz1/2W-1)	Responsivitylp	Resistance (Rd) (W)	Capacitance (Cd) (pF)	Short  Circuit Current Isc (mA)	Open Circuit Voltage Vcc (mV)	Operating Temp. (K)
IS-0.25	q.25/.25x.25	> 1.0E11	> 3 A/W	1000K	70	0.9	80 to 125	77	MSL-8 MSL-12 OR MDL-8 MDL-12	Sapphire
IS-0.5	q.5/.5x.5			500K	100	2
IS-1.0	q1/1x1			350K	350	8
IS-2.0	q2/2x2			100K	1500	30
MSL-8 Side Looking Metal Dewar---8 Hour Hold Time					MSL-12 Side Looking Metal Dewar---12 Hour Hold Time
MDL-8 Down Looking Metal Dewar---8 Hour Hold Time					MDL-12 Down Looking Metal Dewar---12 Hour Hold Time